硅单晶中炭含量和氧含量分别是多少算合格的,偏高还是偏低好.

你是哪个专业的,我们也开这门课了,确实抽象的很.有空可以交流一下.可以用倒格矢d=2*3.14/|G|,将倒格矢算出来就行了.倒格矢可由正格子计算出来.你再看看!

红外的话就是振转光谱 就是在红外光的照射下 不同原子的振动和转动能级的跃迁吸收的红外光的波长不同 这样在特定的位置会有吸收峰 因为硅和碳的电子的红外光谱不同 所以可以用

1.The levy and ultra-high group area determined melting (FZ-Silicon)
Through the area of low melting process control impurity content low,defect density,lattice structure perfect determined,in the process of crystal growth not introducing any impurities,the resistivity usually in 1000 Ω.Cm above,mainly used for making high back pressure device and optical electronic devices.
The release of the 8 inches area determined melting,and my company independent research and development and into,is domestic first single 8 inches melting zone determined,the technology has reached the international advanced level.
2.Neutron irradiation melting zone determined (NTDFZ-Silicon)
The kind of neutron radiation determined through melting zone obtain high resistivity uniformity of the determined to ensure that the device the yield of production and consistency.Mainly used for making silicon rectifier,SCR,giant transistors,thyristor,

对于四探针测硅单晶的电阻率与样品的厚度和直径有关!直径修订来说影响不大,但是,厚度对电阻率的影响将是相当大的!一般我们厚度方面我们分4mm以上的样块,对于4mm以下的,一般根据厚度就要具体计算了!